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IPG20N04S412ATMA1 Технические параметры

Infineon Technologies  IPG20N04S412ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Supplier Device Package PG-TDSON-8-4
Current - Continuous Drain (Id) @ 25℃ 20A
Turn Off Delay Time 10 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 41W
Element Configuration Dual
Power Dissipation 41W
Turn On Delay Time 9 ns
Power - Max 41W
Свойство продукта Значение свойства
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 12.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 15μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 2ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain to Source Breakdown Voltage 40V
Input Capacitance 1.13nF
FET Feature Standard
Drain to Source Resistance 12.2mOhm
Rds On Max 12.2 mΩ
Height 1mm
Length 5.15mm
Width 6.15mm
RoHS Status ROHS3 Compliant
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IPG20N04S412ATMA1 Документы

IPG20N04S412ATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPG20N04S412ATMA1 reference price.Infineon Technologies. IPG20N04S412ATMA1 parameters, IPG20N04S412ATMA1 Datasheet PDF and pin diagram description download.You can use the IPG20N04S412ATMA1 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IPG20N04S412ATMA1 pin diagram and circuit diagram and usage method of function,IPG20N04S412ATMA1 electronics tutorials.You can download from the Anli.