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IPG20N04S4L08ATMA1 Технические параметры

Infineon Technologies  IPG20N04S4L08ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 40 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 54W
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7 ns
Power - Max 54W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 8.2m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 22μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 3ns
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 40V
Avalanche Energy Rating (Eas) 145 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPG20N04S4L08ATMA1 Документы

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