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IPG20N04S4L11AATMA1 Технические параметры

Infineon Technologies  IPG20N04S4L11AATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 41W
Свойство продукта Значение свойства
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Operating Mode ENHANCEMENT MODE
Power Dissipation 41W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 11.6m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 15μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0116Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPG20N04S4L11AATMA1 Документы

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