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IPG20N06S4L14ATMA2 Технические параметры

Infineon Technologies  IPG20N06S4L14ATMA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 40 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Published 1997
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Additional Feature LOGIC LEVEL COMPATIBLE
Max Power Dissipation 50W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 2Channels
Свойство продукта Значение свойства
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Turn On Delay Time 8 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 13.7m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2890pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 2ns
Fall Time (Typ) 15 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0137Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 90 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 175°C
FET Feature Logic Level Gate
Height 1mm
Length 5.15mm
Width 6.15mm
RoHS Status ROHS3 Compliant

IPG20N06S4L14ATMA2 Документы

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