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IPG20N06S4L26AATMA1 Технические параметры

Infineon Technologies  IPG20N06S4L26AATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 15 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 33W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 33W
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 26m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 10μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1430pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 3ns
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Avalanche Energy Rating (Eas) 35 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPG20N06S4L26AATMA1 Документы

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