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IPG20N10S4L35ATMA1 Технические параметры

Infineon Technologies  IPG20N10S4L35ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Number of Elements 2 Elements
Turn Off Delay Time 18 ns
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 43W
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation 43W
Turn On Delay Time 3 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 35m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 16μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Rise Time 2ns
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 100V
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IPG20N10S4L35ATMA1 Документы

IPG20N10S4L35ATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPG20N10S4L35ATMA1 reference price.Infineon Technologies. IPG20N10S4L35ATMA1 parameters, IPG20N10S4L35ATMA1 Datasheet PDF and pin diagram description download.You can use the IPG20N10S4L35ATMA1 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IPG20N10S4L35ATMA1 pin diagram and circuit diagram and usage method of function,IPG20N10S4L35ATMA1 electronics tutorials.You can download from the Anli.