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IPI100N06S3L-03 Технические параметры

Infineon Technologies  IPI100N06S3L-03 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 100A Tc
Drive Voltage (Max Rds On, Min Rds On) 5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 110 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 55V
Peak Reflow Temperature (Cel) 260
Current Rating 100A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 230μA
Input Capacitance (Ciss) (Max) @ Vds 26240pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 550nC @ 10V
Rise Time 70ns
Vgs (Max) ±16V
Fall Time (Typ) 77 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0046Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 690 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

IPI100N06S3L-03 Документы

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