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IPI100N08N3GHKSA1 Технические параметры

Infineon Technologies  IPI100N08N3GHKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 70A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 100W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Position SINGLE
Reach Compliance Code compliant
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46μA
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 80V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 70A
Drain-source On Resistance-Max 0.01Ohm
Pulsed Drain Current-Max (IDM) 280A
DS Breakdown Voltage-Min 80V
Avalanche Energy Rating (Eas) 90 mJ
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IPI100N08N3GHKSA1 Документы

IPI100N08N3GHKSA1 brand manufacturers: Infineon Technologies, Anli stock, IPI100N08N3GHKSA1 reference price.Infineon Technologies. IPI100N08N3GHKSA1 parameters, IPI100N08N3GHKSA1 Datasheet PDF and pin diagram description download.You can use the IPI100N08N3GHKSA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPI100N08N3GHKSA1 pin diagram and circuit diagram and usage method of function,IPI100N08N3GHKSA1 electronics tutorials.You can download from the Anli.