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IPI50R299CPXKSA1 Технические параметры

Infineon Technologies  IPI50R299CPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 8 Weeks
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 104W Tc
Turn Off Delay Time 80 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™
Published 2008
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 104W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 299m Ω @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.299Ohm
Drain to Source Breakdown Voltage 550V
Pulsed Drain Current-Max (IDM) 26A
Avalanche Energy Rating (Eas) 289 mJ
RoHS Status RoHS Compliant
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IPI50R299CPXKSA1 Документы

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