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IPI60R165CPXKSA1 Технические параметры
Infineon Technologies IPI60R165CPXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Published | 2014 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSIP-T3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-262AA | |
| Drain Current-Max (Abs) (ID) | 21A | |
| Drain-source On Resistance-Max | 0.165Ohm | |
| Pulsed Drain Current-Max (IDM) | 61A | |
| DS Breakdown Voltage-Min | 600V | |
| Avalanche Energy Rating (Eas) | 522 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| RoHS Status | ROHS3 Compliant |
IPI60R165CPXKSA1 Документы
- Other Related DocumentsPart Number Guide
- Simulation ModelsCoolMOS? Power MOSFET 600V CP Spice Model
- Datasheets
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