Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
IPI60R199CPXKSA2 Технические параметры
Infineon Technologies IPI60R199CPXKSA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 26 Weeks | |
| Mount | Through Hole | |
| Package / Case | TO-262 | |
| Number of Pins | 3Pins | |
| Number of Elements | 1 Element | |
| Turn Off Delay Time | 50 ns | |
| Published | 2008 | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | SINGLE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Turn On Delay Time | 10 ns | |
| Transistor Application | SWITCHING | |
| Rise Time | 5ns | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 16A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.199Ohm | |
| Pulsed Drain Current-Max (IDM) | 51A | |
| DS Breakdown Voltage-Min | 600V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| RoHS Status | ROHS3 Compliant |
IPI60R199CPXKSA2 Документы
- Other Related DocumentsPart Number Guide
- ConflictMineralStatementInfineon-company-51.pdf
- Datasheets
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ