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IPI80CN10N G Технические параметры

Infineon Technologies  IPI80CN10N G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 13A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 31W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 12μA
Input Capacitance (Ciss) (Max) @ Vds 716pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 13A
Drain-source On Resistance-Max 0.08Ohm
Pulsed Drain Current-Max (IDM) 52A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 17 mJ
RoHS Status RoHS Compliant
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IPI80CN10N G Документы

IPI80CN10N G brand manufacturers: Infineon Technologies, Anli stock, IPI80CN10N G reference price.Infineon Technologies. IPI80CN10N G parameters, IPI80CN10N G Datasheet PDF and pin diagram description download.You can use the IPI80CN10N G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPI80CN10N G pin diagram and circuit diagram and usage method of function,IPI80CN10N G electronics tutorials.You can download from the Anli.