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IPI80N06S208AKSA2 Технические параметры

Infineon Technologies  IPI80N06S208AKSA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 215W Tc
Turn Off Delay Time 32 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Свойство продукта Значение свойства
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 2860pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 96nC @ 10V
Rise Time 15ns
Vgs (Max) ±20V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.008Ohm
Avalanche Energy Rating (Eas) 450 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IPI80N06S208AKSA2 Документы

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