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IPI90N04S402AKSA1 Технические параметры

Infineon Technologies  IPI90N04S402AKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 90A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 150W Tc
Turn Off Delay Time 27 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 23 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 4V @ 95μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 9430pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Rise Time 13ns
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0025Ohm
Avalanche Energy Rating (Eas) 475 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IPI90N04S402AKSA1 Документы

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