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IPN60R1K0CEATMA1 Технические параметры

Infineon Technologies  IPN60R1K0CEATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case SOT-223-3
Number of Pins 3Pins
Supplier Device Package PG-SOT223
Current - Continuous Drain (Id) @ 25℃ 6.8A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 5W Tc
Turn Off Delay Time 60 ns
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ CE
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Свойство продукта Значение свойства
Number of Channels 1Channel
Power Dissipation 5W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Continuous Drain Current (ID) 6.8A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 900mOhm
Height 1.8mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Просмотр сходства

IPN60R1K0CEATMA1 Документы

IPN60R1K0CEATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPN60R1K0CEATMA1 reference price.Infineon Technologies. IPN60R1K0CEATMA1 parameters, IPN60R1K0CEATMA1 Datasheet PDF and pin diagram description download.You can use the IPN60R1K0CEATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPN60R1K0CEATMA1 pin diagram and circuit diagram and usage method of function,IPN60R1K0CEATMA1 electronics tutorials.You can download from the Anli.