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IPN60R600P7SATMA1 Технические параметры

Infineon Technologies  IPN60R600P7SATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Package / Case TO-261-3
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 6A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 7W Tc
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS™ P7
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds 363pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.6Ohm
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
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IPN60R600P7SATMA1 Документы

IPN60R600P7SATMA1 brand manufacturers: Infineon Technologies, Anli stock, IPN60R600P7SATMA1 reference price.Infineon Technologies. IPN60R600P7SATMA1 parameters, IPN60R600P7SATMA1 Datasheet PDF and pin diagram description download.You can use the IPN60R600P7SATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPN60R600P7SATMA1 pin diagram and circuit diagram and usage method of function,IPN60R600P7SATMA1 electronics tutorials.You can download from the Anli.