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IPP023NE7N3GXKSA1 Технические параметры

Infineon Technologies  IPP023NE7N3GXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 120A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 300W Tc
Turn Off Delay Time 70 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Terminal Position SINGLE
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 273μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 14400pF @ 37.5V
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Rise Time 26ns
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 120A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 75V
Pulsed Drain Current-Max (IDM) 480A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IPP023NE7N3GXKSA1 Документы

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