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IPP040N06NAKSA1 Технические параметры

Infineon Technologies  IPP040N06NAKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 20A Ta 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 3W Ta 107W Tc
Turn Off Delay Time 30 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2008
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 107W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.8V @ 50μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 30V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 16ns
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.004Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 70 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPP040N06NAKSA1 Документы

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