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IPP04CN10NGXKSA1 Технические параметры

Infineon Technologies  IPP04CN10NGXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Package / Case TO-220
Number of Pins 3Pins
Number of Elements 1 Element
Turn Off Delay Time 76 ns
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Свойство продукта Значение свойства
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 34 ns
Transistor Application SWITCHING
Halogen Free Halogen Free
Rise Time 78ns
Drain to Source Voltage (Vdss) 100V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 400A
Input Capacitance 13.8nF
Avalanche Energy Rating (Eas) 1000 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 3.9mOhm
Rds On Max 4.2 mΩ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IPP04CN10NGXKSA1 Документы

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