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IPP051N15N5AKSA1 Технические параметры

Infineon Technologies  IPP051N15N5AKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Drive Voltage (Max Rds On, Min Rds On) 8V 10V
Number of Elements 1 Element
Power Dissipation (Max) 500mW Tc
Turn Off Delay Time 25.5 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™ 5
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 19.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.1m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4.6V @ 264μA
Input Capacitance (Ciss) (Max) @ Vds 7800pF @ 75V
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 150V
Vgs (Max) ±20V
Continuous Drain Current (ID) 120A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 230 mJ
Max Junction Temperature (Tj) 175°C
Height 20.7mm
RoHS Status ROHS3 Compliant

IPP051N15N5AKSA1 Документы

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