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IPP057N08N3GHKSA1 Технические параметры

Infineon Technologies  IPP057N08N3GHKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 150W Tc
Turn Off Delay Time 38 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
JESD-30 Code R-PSFM-T3
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 4750pF @ 40V
Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
Rise Time 66ns
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0057Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 320A
RoHS Status RoHS Compliant
Просмотр сходства

IPP057N08N3GHKSA1 Документы

IPP057N08N3GHKSA1 brand manufacturers: Infineon Technologies, Anli stock, IPP057N08N3GHKSA1 reference price.Infineon Technologies. IPP057N08N3GHKSA1 parameters, IPP057N08N3GHKSA1 Datasheet PDF and pin diagram description download.You can use the IPP057N08N3GHKSA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPP057N08N3GHKSA1 pin diagram and circuit diagram and usage method of function,IPP057N08N3GHKSA1 electronics tutorials.You can download from the Anli.