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Infineon Technologies IPP072N10N3GHKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | PG-TO220-3 | |
| Current - Continuous Drain (Id) @ 25℃ | 80A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 6V 10V | |
| Power Dissipation (Max) | 150W Tc | |
| Turn Off Delay Time | 37 ns | |
| Operating Temperature | -55°C~175°C TJ | |
| Packaging | Tube | |
| Series | OptiMOS™ | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Turn On Delay Time | 19 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 90μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4910pF @ 50V | |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V | |
| Rise Time | 37ns | |
| Drain to Source Voltage (Vdss) | 100V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 9 ns | |
| Continuous Drain Current (ID) | 80A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 80V | |
| Input Capacitance | 4.91nF | |
| Drain to Source Resistance | 7.2mOhm | |
| Rds On Max | 7.2 mΩ | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |