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Infineon Technologies IPP076N15N5AKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 13 Weeks | |
| Mounting Type | Through Hole | |
| Surface Mount | NO | |
| Number of Elements | 1 Element | |
| Turn Off Delay Time | 20 ns | |
| Packaging | Tube | |
| Published | 2013 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 214W | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 14 ns | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | 150V | |
| Polarity/Channel Type | N-CHANNEL | |
| Continuous Drain Current (ID) | 112A | |
| JEDEC-95 Code | TO-220AB | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 150V | |
| Pulsed Drain Current-Max (IDM) | 448A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Max Junction Temperature (Tj) | 175°C | |
| Drain to Source Resistance | 5.9mOhm | |
| Height | 20.7mm | |
| RoHS Status | ROHS3 Compliant |