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IPP110N20NAXK Технические параметры

Infineon Technologies  IPP110N20NAXK technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Package / Case TO-220-3
Number of Pins 3Pins
RoHS Details
Mounting Styles Through Hole
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 88 A
Rds On - Drain-Source Resistance 9.9 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 87 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 300 W
Channel Mode Enhancement
Tradename OptiMOS
Factory Pack QuantityFactory Pack Quantity 500
Typical Turn-Off Delay Time 41 ns
Typical Turn-On Delay Time 18 ns
Свойство продукта Значение свойства
Part # Aliases SP000877672 IPP110N20NAAKSA1
Unit Weight 0.068784 oz
Turn Off Delay Time 41 ns
Series OptiMOS 3
Packaging Tube
Max Operating Temperature 175 °C
Min Operating Temperature -55 °C
Configuration Single
Number of Channels 1 ChannelChannel
Element Configuration Single
Power Dissipation 300 W
Rise Time 26 ns
Transistor Type 1 N-Channel
Continuous Drain Current (ID) 88 A
Gate to Source Voltage (Vgs) 20 V
Drain to Source Breakdown Voltage 200 V
Drain to Source Resistance 10.7 mΩ
Height 15.65 mm
Length 10 mm
Width 4.4 mm
Просмотр сходства
IPP110N20NAXK brand manufacturers: Infineon Technologies, Anli stock, IPP110N20NAXK reference price.Infineon Technologies. IPP110N20NAXK parameters, IPP110N20NAXK Datasheet PDF and pin diagram description download.You can use the IPP110N20NAXK Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPP110N20NAXK pin diagram and circuit diagram and usage method of function,IPP110N20NAXK electronics tutorials.You can download from the Anli.