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IPP11N03LA Технические параметры

Infineon Technologies  IPP11N03LA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 30A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 52W Tc
Turn Off Delay Time 20 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 25V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 30A
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 52W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.5m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 1358pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Rise Time 43ns
Vgs (Max) ±20V
Fall Time (Typ) 2.8 ns
Continuous Drain Current (ID) 30A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0115Ohm
Drain to Source Breakdown Voltage 25V
Pulsed Drain Current-Max (IDM) 210A
Avalanche Energy Rating (Eas) 80 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

IPP11N03LA Документы

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