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IPP35CN10NGXKSA1 Технические параметры

Infineon Technologies  IPP35CN10NGXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 27A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 58W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Свойство продукта Значение свойства
Reach Compliance Code compliant
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 4V @ 29μA
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 27A
Drain-source On Resistance-Max 0.035Ohm
Pulsed Drain Current-Max (IDM) 108A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 47 mJ
RoHS Status RoHS Compliant
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IPP35CN10NGXKSA1 Документы

IPP35CN10NGXKSA1 brand manufacturers: Infineon Technologies, Anli stock, IPP35CN10NGXKSA1 reference price.Infineon Technologies. IPP35CN10NGXKSA1 parameters, IPP35CN10NGXKSA1 Datasheet PDF and pin diagram description download.You can use the IPP35CN10NGXKSA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPP35CN10NGXKSA1 pin diagram and circuit diagram and usage method of function,IPP35CN10NGXKSA1 electronics tutorials.You can download from the Anli.