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IPP45N06S4L08AKSA2 Технические параметры

Infineon Technologies  IPP45N06S4L08AKSA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 45A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 71W Tc
Turn Off Delay Time 45 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series Automotive, AEC-Q101, OptiMOS™
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.2m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 2.2V @ 35μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4780pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 2ns
Vgs (Max) ±16V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 45A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 60V
Drain-source On Resistance-Max 0.0079Ohm
Pulsed Drain Current-Max (IDM) 180A
Avalanche Energy Rating (Eas) 97 mJ
Height 15.65mm
Length 10mm
Width 4.4mm
RoHS Status ROHS3 Compliant

IPP45N06S4L08AKSA2 Документы

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