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IPP45P03P4L11AKSA1 Технические параметры

Infineon Technologies  IPP45P03P4L11AKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 45A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 58W Tc
Turn Off Delay Time 45 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 7 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 11.1m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 2V @ 85μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 3ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) +5V, -16V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 45A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 5V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.0111Ohm
Pulsed Drain Current-Max (IDM) 180A
Avalanche Energy Rating (Eas) 110 mJ
RoHS Status RoHS Compliant
Lead Free Contains Lead

IPP45P03P4L11AKSA1 Документы

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