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IPP50R190CEXKSA1 Технические параметры

Infineon Technologies  IPP50R190CEXKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 18.5A Tc
Drive Voltage (Max Rds On, Min Rds On) 13V
Number of Elements 1 Element
Power Dissipation (Max) 127W Tc
Turn Off Delay Time 54 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ CE
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 127W
Turn On Delay Time 9.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 6.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 510μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1137pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 47.2nC @ 10V
Rise Time 8.5ns
Vgs (Max) ±20V
Fall Time (Typ) 7.5 ns
Continuous Drain Current (ID) 18.5A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain-source On Resistance-Max 0.19Ohm
Drain to Source Breakdown Voltage 550V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IPP50R190CEXKSA1 Документы

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