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IPP60R040C7XKSA1 Технические параметры

Infineon Technologies  IPP60R040C7XKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 50A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 227W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ C7
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.24mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 50A
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.04Ohm
Pulsed Drain Current-Max (IDM) 211A
Avalanche Energy Rating (Eas) 249 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IPP60R040C7XKSA1 Документы

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