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Infineon Technologies IPP65R190C7FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 18 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Number of Pins | 3Pins | |
| Supplier Device Package | PG-TO220-3 | |
| Current - Continuous Drain (Id) @ 25℃ | 13A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 72W Tc | |
| Turn Off Delay Time | 54 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | CoolMOS™ C7 | |
| Published | 2004 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 150°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Min Operating Temperature | -55°C | |
| Turn On Delay Time | 11 ns | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5.7A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 290μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 400V | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V | |
| Drain to Source Voltage (Vdss) | 650V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 9 ns | |
| Continuous Drain Current (ID) | 13A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Max Dual Supply Voltage | 650V | |
| Input Capacitance | 1.15nF | |
| Drain to Source Resistance | 168mOhm | |
| Rds On Max | 190 mΩ | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |