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IPP65R190C7FKSA1 Технические параметры

Infineon Technologies  IPP65R190C7FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Supplier Device Package PG-TO220-3
Current - Continuous Drain (Id) @ 25℃ 13A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 72W Tc
Turn Off Delay Time 54 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ C7
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Свойство продукта Значение свойства
Min Operating Temperature -55°C
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 290μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Input Capacitance 1.15nF
Drain to Source Resistance 168mOhm
Rds On Max 190 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IPP65R190C7FKSA1 Документы

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