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IPP80N03S4L03AKSA1 Технические параметры

Infineon Technologies  IPP80N03S4L03AKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 136W Tc
Turn Off Delay Time 62 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
HTS Code 8541.29.00.95
Свойство продукта Значение свойства
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 14 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 90μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 9750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
Rise Time 9ns
Vgs (Max) ±16V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0027Ohm
Avalanche Energy Rating (Eas) 260 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPP80N03S4L03AKSA1 Документы

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