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IPP80N06S209AKSA2 Технические параметры

Infineon Technologies  IPP80N06S209AKSA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 190W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Terminal Position SINGLE
Reach Compliance Code not_compliant
Reference Standard AEC-Q101
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 125μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2360pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 55V
Drain-source On Resistance-Max 0.0091Ohm
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 370 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IPP80N06S209AKSA2 Документы

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