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IPP80P03P4L04AKSA1 Технические параметры

Infineon Technologies  IPP80P03P4L04AKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 137W Tc
Turn Off Delay Time 140 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Свойство продукта Значение свойства
Terminal Position SINGLE
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 17 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 253μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 11300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) +5V, -16V
Fall Time (Typ) 40 ns
Continuous Drain Current (ID) 80A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 5V
Max Dual Supply Voltage -30V
Drain-source On Resistance-Max 0.007Ohm
Avalanche Energy Rating (Eas) 410 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPP80P03P4L04AKSA1 Документы

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