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IPS50R520CPBKMA1 Технические параметры
Infineon Technologies IPS50R520CPBKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Published | 2008 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-251 | |
| Drain Current-Max (Abs) (ID) | 7.1A | |
| Drain-source On Resistance-Max | 0.52Ohm | |
| Pulsed Drain Current-Max (IDM) | 15A | |
| DS Breakdown Voltage-Min | 500V | |
| Avalanche Energy Rating (Eas) | 166 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| RoHS Status | RoHS Compliant |
IPS50R520CPBKMA1 Документы
- DatasheetsIPS50R520CP
- Other Related DocumentsPart Number Guide
- PCN Obsolescence/ EOLMult Devices EOL 31/Aug/2017
Индекс :
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