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IPS65R1K0CEAKMA2 Технические параметры

Infineon Technologies  IPS65R1K0CEAKMA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Current - Continuous Drain (Id) @ 25℃ 7.2A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 68W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ CE
Свойство продукта Значение свойства
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 328pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 15.3nC @ 10V
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant

IPS65R1K0CEAKMA2 Документы

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