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IPS65R1K5CEAKMA1 Технические параметры

Infineon Technologies  IPS65R1K5CEAKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Weight 343.085929mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.1A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 28W Tc
Turn Off Delay Time 33 ns
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series CoolMOS™ CE
Published 2008
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
JESD-30 Code R-PSIP-T3
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 7.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Rise Time 5.9ns
Vgs (Max) ±20V
Fall Time (Typ) 18.2 ns
Continuous Drain Current (ID) 3.1A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Pulsed Drain Current-Max (IDM) 8.3A
Avalanche Energy Rating (Eas) 26 mJ
RoHS Status RoHS Compliant
Lead Free Contains Lead

IPS65R1K5CEAKMA1 Документы

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