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IPS65R650CEAKMA1 Технические параметры

Infineon Technologies  IPS65R650CEAKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Surface Mount NO
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Transistor Element Material SILICON
Power Dissipation (Max) 86W Tc
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25℃ 10.1A Tc
Published 2013
Packaging Tube
Operating Temperature -40°C~150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drain to Source Voltage (Vdss) 700V
Vgs (Max) ±20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.65Ohm
Pulsed Drain Current-Max (IDM) 18A
Avalanche Energy Rating (Eas) 142 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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IPS65R650CEAKMA1 Документы

IPS65R650CEAKMA1 brand manufacturers: Infineon Technologies, Anli stock, IPS65R650CEAKMA1 reference price.Infineon Technologies. IPS65R650CEAKMA1 parameters, IPS65R650CEAKMA1 Datasheet PDF and pin diagram description download.You can use the IPS65R650CEAKMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPS65R650CEAKMA1 pin diagram and circuit diagram and usage method of function,IPS65R650CEAKMA1 electronics tutorials.You can download from the Anli.