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Infineon Technologies IPS80R750P7AKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 18 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 7A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 51W Tc | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | CoolMOS™ P7 | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PSIP-T3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 750m Ω @ 2.7A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 140μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 500V | |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V | |
| Drain to Source Voltage (Vdss) | 800V | |
| Vgs (Max) | ±20V | |
| Drain-source On Resistance-Max | 0.75Ohm | |
| Pulsed Drain Current-Max (IDM) | 17A | |
| DS Breakdown Voltage-Min | 800V | |
| Avalanche Energy Rating (Eas) | 16 mJ | |
| RoHS Status | ROHS3 Compliant |