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IPSA70R1K4CEAKMA1 Технические параметры

Infineon Technologies  IPSA70R1K4CEAKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5.4A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 53W Tc
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Свойство продукта Значение свойства
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Drain to Source Voltage (Vdss) 700V
Vgs (Max) ±20V
Pulsed Drain Current-Max (IDM) 8.3A
DS Breakdown Voltage-Min 700V
Avalanche Energy Rating (Eas) 26 mJ
RoHS Status ROHS3 Compliant
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IPSA70R1K4CEAKMA1 Документы

IPSA70R1K4CEAKMA1 brand manufacturers: Infineon Technologies, Anli stock, IPSA70R1K4CEAKMA1 reference price.Infineon Technologies. IPSA70R1K4CEAKMA1 parameters, IPSA70R1K4CEAKMA1 Datasheet PDF and pin diagram description download.You can use the IPSA70R1K4CEAKMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPSA70R1K4CEAKMA1 pin diagram and circuit diagram and usage method of function,IPSA70R1K4CEAKMA1 electronics tutorials.You can download from the Anli.