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IPU50R1K4CEAKMA1 Технические параметры

Infineon Technologies  IPU50R1K4CEAKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.1A Tc
Drive Voltage (Max Rds On, Min Rds On) 13V
Number of Elements 1 Element
Power Dissipation (Max) 42W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ CE
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3Terminations
Свойство продукта Значение свойства
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 900mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds 178pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Pulsed Drain Current-Max (IDM) 8.8A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 49 mJ
RoHS Status ROHS3 Compliant

IPU50R1K4CEAKMA1 Документы

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