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IPU50R3K0CEBKMA1 Технические параметры

Infineon Technologies  IPU50R3K0CEBKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 1.7A Tc
Drive Voltage (Max Rds On, Min Rds On) 13V
Number of Elements 1 Element
Power Dissipation (Max) 18W Tc
Turn Off Delay Time 23 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ CE
Published 2013
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3Terminations
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Свойство продукта Значение свойства
Turn On Delay Time 7.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3 Ω @ 400mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 30μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 84pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 10V
Rise Time 5.8ns
Vgs (Max) ±20V
Fall Time (Typ) 49 ns
Continuous Drain Current (ID) 1.7A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 550V
Pulsed Drain Current-Max (IDM) 4.1A
Avalanche Energy Rating (Eas) 18 mJ
Height 6.22mm
Length 6.73mm
Width 2.41mm
RoHS Status RoHS Compliant
Lead Free Contains Lead

IPU50R3K0CEBKMA1 Документы

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