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IPU50R950CEAKMA1 Технические параметры

Infineon Technologies  IPU50R950CEAKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4.3A Tc
Drive Voltage (Max Rds On, Min Rds On) 13V
Number of Elements 1 Element
Power Dissipation (Max) 53W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ CE
Published 2015
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 1.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 231pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
Continuous Drain Current (ID) 4.3A
Drain-source On Resistance-Max 0.95Ohm
Pulsed Drain Current-Max (IDM) 12.8A
DS Breakdown Voltage-Min 500V
Avalanche Energy Rating (Eas) 68 mJ
RoHS Status RoHS Compliant

IPU50R950CEAKMA1 Документы

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