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IPU50R950CEBTMA1 Технические параметры

Infineon Technologies  IPU50R950CEBTMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package PG-TO251-3-345
Mfr Infineon Technologies
Package Bulk
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Power Dissipation (Max) 34W (Tc)
Свойство продукта Значение свойства
RoHS Non-Compliant
Operating Temperature -55°C ~ 150°C (TJ)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Drain to Source Voltage (Vdss) 500 V
Vgs (Max) ±20V
FET Feature -
Просмотр сходства
IPU50R950CEBTMA1 brand manufacturers: Infineon Technologies, Anli stock, IPU50R950CEBTMA1 reference price.Infineon Technologies. IPU50R950CEBTMA1 parameters, IPU50R950CEBTMA1 Datasheet PDF and pin diagram description download.You can use the IPU50R950CEBTMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPU50R950CEBTMA1 pin diagram and circuit diagram and usage method of function,IPU50R950CEBTMA1 electronics tutorials.You can download from the Anli.