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IPU60R1K0CEAKMA2 Технические параметры

Infineon Technologies  IPU60R1K0CEAKMA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4.3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 61W Tc
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series CoolMOS™ CE
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 4.3A
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 1Ohm
Pulsed Drain Current-Max (IDM) 12A
Avalanche Energy Rating (Eas) 46 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

IPU60R1K0CEAKMA2 Документы

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