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IPU60R1K5CEBKMA1 Технические параметры

Infineon Technologies  IPU60R1K5CEBKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Weight 343.085929mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 3.1A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 28W Tc
Turn Off Delay Time 40 ns
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series CoolMOS™ CE
Published 2015
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3Terminations
JESD-30 Code R-PSIP-T3
Number of Channels 1Channel
Свойство продукта Значение свойства
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 3.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Pulsed Drain Current-Max (IDM) 8A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 26 mJ
RoHS Status ROHS3 Compliant

IPU60R1K5CEBKMA1 Документы

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