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Infineon Technologies IPU60R1K5CEBKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Weight | 343.085929mg | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 3.1A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 28W Tc | |
| Turn Off Delay Time | 40 ns | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Tube | |
| Series | CoolMOS™ CE | |
| Published | 2015 | |
| Pbfree Code | yes | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 3Terminations | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Channels | 1Channel |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Turn On Delay Time | 8 ns | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 1.5 Ω @ 1.1A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 90μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V | |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V | |
| Rise Time | 7ns | |
| Drain to Source Voltage (Vdss) | 600V | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 20 ns | |
| Continuous Drain Current (ID) | 3.1A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 5A | |
| Pulsed Drain Current-Max (IDM) | 8A | |
| DS Breakdown Voltage-Min | 600V | |
| Avalanche Energy Rating (Eas) | 26 mJ | |
| RoHS Status | ROHS3 Compliant |