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IPU60R2K0C6BKMA1 Технические параметры

Infineon Technologies  IPU60R2K0C6BKMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 2.4A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 22.3W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™
Published 2008
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Resistance 1.8Ohm
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2 Ω @ 760mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 60μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Pulsed Drain Current-Max (IDM) 6A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 11 mJ
REACH SVHC No SVHC
RoHS Status RoHS Compliant

IPU60R2K0C6BKMA1 Документы

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