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IPW65R045C7FKSA1 Технические параметры

Infineon Technologies  IPW65R045C7FKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 46A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 227W Tc
Turn Off Delay Time 82 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series CoolMOS™ C7
Published 2008
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation 227W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 45m Ω @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 1.25mA
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Rise Time 14ns
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.045Ohm
Drain to Source Breakdown Voltage 650V
Avalanche Energy Rating (Eas) 249 mJ
Max Junction Temperature (Tj) 150°C
Height 25.4mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IPW65R045C7FKSA1 Документы

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