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IPW65R048CFDAFKSA1 Технические параметры

Infineon Technologies  IPW65R048CFDAFKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 63.3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 500W Tc
Turn Off Delay Time 85 ns
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series Automotive, AEC-Q101, CoolMOS™
Published 2008
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Additional Feature HIGH RELIABILITY
Terminal Position SINGLE
Pin Count 3
Свойство продукта Значение свойства
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 48m Ω @ 29.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 2.9mA
Input Capacitance (Ciss) (Max) @ Vds 7440pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 10ns
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 63.3A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.048Ohm
Pulsed Drain Current-Max (IDM) 228A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IPW65R048CFDAFKSA1 Документы

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