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IPW65R080CFDAFKSA1 Технические параметры

Infineon Technologies  IPW65R080CFDAFKSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 43.3A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 391W Tc
Turn Off Delay Time 85 ns
Operating Temperature -40°C~150°C TJ
Packaging Tube
Series Automotive, AEC-Q101, CoolMOS™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Свойство продукта Значение свойства
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 17.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.76mA
Input Capacitance (Ciss) (Max) @ Vds 4440pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 161nC @ 10V
Rise Time 18ns
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 43.3A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.08Ohm
Drain to Source Breakdown Voltage 650V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IPW65R080CFDAFKSA1 Документы

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